SnSe-based limited reprogrammable cell
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United States of America Patent
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Jan 24, 2012
Grant Date -
Mar 20, 2008
app pub date -
Nov 20, 2007
filing date -
Feb 23, 2005
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Abstract
Methods and apparatus for providing a memory device that can be programmed a limited number of times. According to exemplary embodiments, a memory device and its method of formation provide a first electrode, a second electrode and a layer of a chalcogenide or germanium comprising material between the first electrode and the second electrode. The memory device further includes a tin-chalcogenide layer between the chalcogenide or germanium comprising material layer and the second electrode.
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