US Patent No: 8,101,982

Number of patents in Portfolio can not be more than 2000

Memory device which comprises a multi-layer capacitor

ALSO PUBLISHED AS: 20070205449

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

A memory device is provided. The memory device including memory cells having at least three stacked electrodes spaced apart pairwise by dielectric material so that the pairs of electrodes form respective capacitor layers. The capacitors are connected electrically in parallel to each other. The dielectric material is optionally ferroelectric material, in which case the capacitors are ferrocapacitors.

Loading the Abstract Image... loading....

First Claim

See full text

all claims..

Related Publications

Loading Related Publications... loading....

Patent Owner(s)

Patent OwnerAddressTotal Patents
SONY CORPORATIONTOKYO, JP39670

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishida, Takehisa Tokyo, JP 50 189

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SAMSUNG ELECTRONICS CO., LTD. (3)
5,986,298 Matrix type multiple numeration system ferroelectric random access memory using leakage current 9 1997
6,077,716 Matrix type multiple numeration system ferroelectric random access memory using leakage current 11 1999
6,753,193 Method of fabricating ferroelectric memory device 4 2003
 
THIN FILM ELECTRONICS ASA (3)
6,498,744 Ferroelectric data processing device 14 2001
2004/0209,420 Method for making a ferroelectric memory cell in a ferroelectric memory device, and a ferroelectric memory device 17 2003
2006/0160,251 Method in the fabrication of a memory device 6 2005
 
SONY CORPORATION (2)
6,700,146 Semiconductor memory device and method for producing the same 9 2003
7,227,770 Ferroelectric-type nonvolatile semiconductor memory 1 2006
 
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (1)
6,300,653 Method for forming a high areal capacitance planar capacitor 10 1998
 
Hughes Aircraft Company (1)
5,031,144 Ferroelectric memory with non-destructive readout including grid electrode between top and bottom electrodes 64 1990
 
KABUSHIKI KAISHA TOSHIBA (1)
2004/0124,536 Semiconductor device 1 2003
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
4,700,457 Method of making multilayer capacitor memory device 112 1986
 
QIMONDA AG (1)
6,800,890 Memory architecture with series grouped by cells 5 2002
 
ROCKSTAR CONSORTIUM US LP (1)
5,583,359 Capacitor structure for an integrated circuit 234 1995
 
SEIKO EPSON CORPORATION (1)
6,737,690 Ferroelectronic memory and electronic apparatus 3 2002
 
TEXAS INSTRUMENTS INCORPORATED (1)
5,375,085 Three-dimensional ferroelectric integrated circuit without insulation layer between memory layers 29 1992

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
Allied Signal (1)
5,514,482 Thermal barrier coating system for superalloy components 106 1984

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
3.5 Year Payment $1600.00 $800.00 $400.00 Jul 24, 2015
7.5 Year Payment $3600.00 $1800.00 $900.00 Jul 24, 2019
11.5 Year Payment $7400.00 $3700.00 $1850.00 Jul 24, 2023
Fee Large entity fee small entity fee micro entity fee
Surcharge - 3.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00

Full Text

 
loading....