Manufacturing method of semiconductor memory device
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United States of America Patent
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Jan 31, 2012
Grant Date -
Aug 5, 2010
app pub date -
Jan 29, 2010
filing date -
Jan 30, 2009
priority date (Note) -
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Abstract
To provide a manufacturing method of a semiconductor memory device, the method including forming contact plugs to be connected to a drain region or a source region of each of transistors, by using a SAC line technique of selectively etching an insulation layer that covers each of the transistors by using a mask having a line-shaped opening provided across the contact plugs. Each of the transistors constituting a sense amplifier that amplifies a potential difference between bit lines is a ring-gate transistor.
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