Method for setting PCRAM devices
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United States of America Patent
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Jan 31, 2012
Grant Date -
Jul 15, 2010
app pub date -
Jan 12, 2009
filing date -
Jan 12, 2009
priority date (Note) -
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Abstract
Memory devices and methods for operating such devices are described herein. A method as described herein includes applying a bias arrangement to a memory cell to change the resistance state from a higher resistance state to a lower resistance state. The bias arrangement comprises a first voltage pulse and a second voltage pulse across the phase change memory element, the second voltage pulse having a voltage polarity different from that of the first voltage pulse.
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