Method for passivating exposed copper surfaces in a metallization layer of a semiconductor device
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United States of America Patent
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Feb 7, 2012
Grant Date -
Apr 1, 2010
app pub date -
Sep 9, 2009
filing date -
Sep 30, 2008
priority date (Note) -
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Abstract
When forming sophisticated metallization systems, surface integrity of an exposed metal surface, such as a copper-containing surface, may be enhanced by exposing the surface to a vapor of a passivation agent. Due to the corresponding interaction with the metal surface, enhanced integrity may be accomplished, while at the same time damage of exposed dielectric surface portions may be significantly reduced compared to conventional aggressive wet chemical cleaning processes that are typically used in conventional patterning regimes.
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