Method of a multi-level cell resistance random access memory with metal oxides
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United States of America Patent
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Feb 7, 2012
Grant Date -
Aug 26, 2010
app pub date -
Mar 2, 2010
filing date -
Dec 7, 2006
priority date (Note) -
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Abstract
A method and structure of a bistable resistance random access memory comprise a plurality of programmable resistance random access memory cells where each programmable resistance random access memory cell includes multiple memory members for performing multiple bits for each memory cell. The bistable RRAM includes a first resistance random access member connected to a second resistance random access member through interconnect metal liners and metal oxide strips. The first resistance random access member has a first resistance value Ra, which is determined from the thickness of the first resistance random access member based on the deposition of the first resistance random access member. The second resistance random access member has a second resistance value Rb, which is determined from the thickness of the second resistance random access member based on the deposition of the second resistance random access member.
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