Buried decoupling capacitors, devices and systems including same, and methods of fabrication
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United States of America Patent
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Feb 14, 2012
Grant Date -
Apr 21, 2011
app pub date -
Dec 22, 2010
filing date -
Aug 28, 2006
priority date (Note) -
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Abstract
A buried decoupling capacitor apparatus and method are provided. According to various embodiments, a buried decoupling capacitor apparatus includes a semiconductor-on-insulator substrate having a buried insulator region and top semiconductor region on the buried insulator region. The apparatus embodiment also includes a first capacitor plate having a doped region in the top semiconductor region in the semiconductor-on-insulator substrate. The apparatus embodiment further includes a dielectric material on the first capacitor plate, and a second capacitor plate on the dielectric material. According to various embodiments, the first capacitor plate, the dielectric material and the second capacitor plate form a decoupling capacitor for use in an integrated circuit.
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