Formation of a tantalum-nitride layer
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United States of America Patent
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Feb 14, 2012
Grant Date -
Dec 9, 2010
app pub date -
Jul 29, 2010
filing date -
Feb 2, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
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