Formation of a silicon oxynitride layer on a high-k dielectric material

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Feb 21, 2012
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Nov 24, 2005
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May 21, 2004
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May 21, 2004

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gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.

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APPLIED MATERIAL INC	3050 BOWERS AVENUE SANTA CLARA CA 95054

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H05H:PLASMA TECHNIQUE

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Inventor Name	Address	# of filed Patents	Total Citations
Higashi, Gregg	San Jose, US	54	1191
Narwankar, Pravin K	Sunnyvale, US	79	5347

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Formation of a silicon oxynitride layer on a high-k dielectric material

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United States of America Patent

10851561

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PATENT NO	8119210
APP PUB NO	20050260347A1
SERIAL NO	10851561
DOCKET NO

US Family Size	Non-US Coverage
Patent Longevity Expired	Forward Citations

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
February 21, 2012	US,8119210,B2 US8119210B2	GRANTED PATENT AS SECOND PUBLICATION
November 24, 2005	US,20050260347,A1 US20050260347A1	FIRST PUBLISHED PATENT APPLICATION

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10851561

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