Resonant structure comprising wire and resonant tunneling transistor

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8120015
APP PUB NO 20090184783A1
SERIAL NO

12357681

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Abstract

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A resonant structure is provided, including a first terminal, a second terminal which faces the first terminal, a wire unit which connects the first terminal and the second terminal, a third terminal which is spaced apart at a certain distance from the wire unit and which resonates the wire unit, and a potential barrier unit which is formed on the wire unit and which provides a negative resistance component. Accordingly, transduction efficiency can be enhanced.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI-DO 16677
KOREA UNIVERSITY INDUSTRIAL AND ACADEMIC COLLABORATION FOUNDATIONKOREA UNIVERSITY ANAM-DONG 5-GA-1 SEONGBUK-GU SEOUL

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ha, Byeoung-Ju Seongnam-Si, KR 32 277
Hwang, Sung-Woo Seoul, KR 26 135
Ju, Byeong-Kwon Seoul, KR 15 82
Kim, Hee-Tae Seosan-Si, KR 19 406
Kim, Yong-Kyu Seoul, KR 16 197
Park, Yun-Kwon Dungducheon-Si, KR 57 522
Rieh, Jae-Sung Seoul, KR 20 131
Shin, Jea-Shik Hwaseong-Si, KR 15 267
Song, In-Sang Seoul, KR 129 1263

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