Semiconductor device

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United States of America Patent

PATENT NO 8120121
APP PUB NO 20100019343A1
SERIAL NO

12441165

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Abstract

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A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.

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Patent Owner(s)

Patent OwnerAddress
X-FAB SEMICONDUCTOR FOUNDRIES GMBHHAARBERGSTR 67 ERFURT 99097

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
De, Pauw Piet Oudenaarde, BE 7 23
Ellis, John Nigel Tavistock, GB 6 40

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