Importance

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Abstract

An apparatus for depositing seed layers over a substrate, which substrate includes a patterned insulating layer with at least one opening surrounded by a field, and which opening has sidewalls, bottom surfaces and top corners, includes: a CVD chamber adapted to deposit one or more CVD seed layers over the substrate; a PVD chamber adapted to deposit one or more PVD seed layers over the substrate; and a controller which includes recipe information. The recipe information includes deposition sequence and process parameters for operation of the deposition chambers. The controller, in response to the recipe information, causes the CVD chamber to deposit a continuous CVD seed layer over the substrate, and causes the PVD chamber to deposit a PVD seed layer over the substrate, wherein: (a) the continuous CVD seed layer is continuous over the sidewalls and bottom surfaces of the at least one opening, (b) the continuous CVD seed layer has a thickness from about 20 Å to about 250 Å over the field, and (c) the controller causes the stopping of the deposition of the seed layers so as to leave room for electroplating inside the at least one opening.

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First Claim