Semiconductor device and etching apparatus
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United States of America Patent
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Feb 28, 2012
Grant Date -
Oct 28, 2010
app pub date -
Jul 6, 2010
filing date -
Apr 7, 2006
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for manufacturing a semiconductor device comprises dry-etching a thin film using a resist mask carrying patterns in which at least one of the width of each pattern and the space between neighboring two patterns ranges from 32 to 130 nm using a halogenated carbon-containing compound gas with the halogen being at least two members selected from the group consisting of F, I and Br. The ratio of at least one of I and Br is not more than 26% of the total amount of the halogen atoms as expressed in terms of the atomic compositional ratio to transfer the patterns onto the thin film. Such etching of a thin film avoids causing damage to the resist mask used. The resulting thin film carrying the transferred patterns is used as a mask for subjecting the underlying material to dry-etching.
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