Multi-pass programming for memory with reduced data storage requirement

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United States of America Patent

PATENT NO 8130552
APP PUB NO 20100061151A1
SERIAL NO

12344763

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Abstract

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Coupling effects between adjacent floating gates in a non-volatile storage device are reduced in a multi-pass programming operation, while reducing program data storage requirements. In one approach, storage elements are programmed in an out of sequence or zigzag word line order. A particular word line is programmed with a coarse program pass, after which another word line is programmed with a fine program pass, after which the particular word line is read. The particular word line is read before another word line is programmed with a coarse program pass which causes coupling interference to storage elements of the particular word line. The read data is subsequently used to perform a fine program pass for the particular word line. This avoids the need to store program data of multiple word lines concurrently, so that storage hardware can be reduced in size along with power consumption.

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Patent Owner(s)

  • SANDISK TECHNOLOGIES LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hemink, Gerrit Jan Yokohama, JP 133 3397
Miwa, Toru Yokohama, JP 49 948

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