Method for modifying insulating or semi-conductive surfaces, and resulting products
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United States of America Patent
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Mar 13, 2012
Grant Date -
Dec 10, 2009
app pub date -
Oct 9, 2006
filing date -
Oct 26, 2005
priority date (Note) -
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Abstract
The present invention relates to the use of a R—N2+ diazonium salt carrying an aromatic group R, for grafting of the aromatic group onto insulating, semiconductor, binary or ternary compound or composite material surfaces, the diazonium salt being present at a concentration close to its solubility limit, notably at a concentration higher than 0.05 M, and preferably varying between approximately 0.5 M to approximately 4 M.
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