Methods for high speed reading operation of phase change memory and device employing same

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United States of America Patent

PATENT NO 8134857
APP PUB NO 20090323409A1
SERIAL NO

12466650

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Abstract

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Phase change based memory devices and methods for operating described herein overcome the performance limitations of slow set speeds and long recovery times commonly associated with phase change memory devices, enabling high speed operation and extending their usefulness into high speed applications typically filled by DRAM and SRAM memory.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yi-Chou Hsinchu, TW 60 3187
Lin, Yuyu Taipei, TW 3 104

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