Abrasive, method of polishing target member and process for producing semiconductor device
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United States of America Patent
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Mar 20, 2012
Grant Date -
Dec 22, 2011
app pub date -
Aug 25, 2011
filing date -
Dec 18, 1997
priority date (Note) -
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Abstract
To polish polishing target surfaces of SiO2 insulating films or the like at a high rate without scratching the surface, the present invention provides an abrasive comprising a slurry comprising a medium and dispersed therein at least one of i) cerium oxide particles constituted of at least two crystallites and having crystal grain boundaries or having a bulk density of not higher than 6.5 g/cm3 and ii) abrasive grains having pores. Also provided are a method of polishing a target member and a process for producing a semiconductor device which make use of this abrasive.
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