Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystal
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United States of America Patent
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Mar 20, 2012
Grant Date -
Dec 3, 2009
app pub date -
Sep 14, 2007
filing date -
Sep 20, 2006
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Expired
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Abstract
Provided are a manufacturing method of a GaN single crystal in which the film thickness of the GaN single crystal can be controlled accurately, even when a hydride vapor phase epitaxy is applied; a GaN thin film template substrate which is suitable for growing a GaN thick film with a fine property; and a GaN single crystal growing apparatus. Provided is a manufacturing method of a GaN single crystal by a hydride vapor phase epitaxy, wherein the hydride vapor phase epitaxy comprises: spraying HCl (hydrogen chloride) onto Ga (gallium) which is heated and fused in a predetermined temperature to generate GaCl (gallium chloride); and forming a GaN thin film by a reaction of the generated GaCl (gallium chloride) with NH3 (ammonia) gas which is hydroxide gas on a substrate, the manufacturing method comprising supplying the NH3 gas in a vicinity of the substrate (for example, at a position which is separated from the substrate by a distance of 0.7-4.0 times as longer than a diameter of the substrate) through a nozzle. Further, as the substrate, an NGO(011) substrate in which the lattice constant thereof is similar to that of GaN is used.
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- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- NIPPON MINING & METALS CO., LTD.
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Morioka, Satoru | Toda, JP | 13 | 55 |
Shimizu, Takayuki | Toda, JP | 242 | 1860 |
Takakusaki, Misao | Toda, JP | 5 | 12 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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