Radiation detector, method of manufacturing a radiation detector, and lithographic apparatus comprising a radiation detector
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United States of America Patent
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Mar 20, 2012
Grant Date -
Jan 22, 2009
app pub date -
Jun 24, 2008
filing date -
Jun 25, 2007
priority date (Note) -
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Abstract
A radiation detector, a method of manufacturing a radiation detector, and a lithographic apparatus comprising a radiation detector. The radiation detector has a radiation sensitive surface. The radiation sensitive surface is sensitive to radiation wavelengths between 10-200 nm and charged particles. The radiation detector has a silicon substrate, a dopant layer, a first electrode, and a second electrode. The silicon substrate is provided in a surface area at a first surface side with doping profile of a certain conduction type. The dopant layer is provided on the first surface side of the silicon substrate. The dopant layer has a first layer of dopant material and a second layer. The second layer is a diffusion layer in contact with the surface area at the first surface side of the silicon substrate. The first electrode is connected to dopant layer. The second electrode is connected to the silicon substrate.
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