Methods and systems for determining a defect criticality index for defects on wafers
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United States of America Patent
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Mar 20, 2012
Grant Date -
Oct 15, 2009
app pub date -
Apr 14, 2008
filing date -
Apr 14, 2008
priority date (Note) -
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Abstract
Various methods and systems for determining a defect criticality index (DCI) for defects on wafers are provided. One computer-implemented method includes determining critical area information for a portion of a design for a wafer surrounding a defect detected on the wafer by an inspection system based on a location of the defect reported by the inspection system and a size of the defect reported by the inspection system. The method also includes determining a DCI for the defect based on the critical area information, a location of the defect with respect to the critical area information, and the reported size of the defect.
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