EUV mask and method for repairing an EUV mask
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United States of America Patent
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-
Mar 27, 2012
Grant Date -
Dec 25, 2008
app pub date -
Jun 20, 2008
filing date -
Jun 20, 2007
priority date (Note) -
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status (Latency Note)
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Abstract
An EUV mask comprises a substrate, a reflective multilayer on the substrate, a phase-shifting material disposed above the multilayer in at least one first portion of the substrate, and a masking material disposed above the multilayer in second portions of the substrate and corresponding to mask patterns of an EUV mask. There is also provided a method for repairing an EUV mask including a substrate, a reflective multilayer on the substrate and at least one defect beneath or within the multilayer. The method includes the steps of determining the position of a defect area of the substrate, in which a phase-shift difference of an exposure radiation is caused by the defect, and depositing a phase-shifting material above the multilayer in at least one first portion of the substrate, the first portion at least partially comprising the defect area.
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