Self-align planerized bottom electrode phase change memory and manufacturing method
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United States of America Patent
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Mar 27, 2012
Grant Date -
Jan 27, 2011
app pub date -
Oct 7, 2010
filing date -
Jan 11, 2006
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Abstract
A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom electrode. The bottom electrode has a top surface that is planarized by chemical mechanical polishing. The top electrode also has a top surface that is planarized by chemical mechanical polishing. A bottom electrode layer like TiN is formed over a substrate and prior to the formation of a via during subsequent process steps. A first dielectric layer is formed over the bottom electrode layer, and a second dielectric layer is formed over the first dielectric layer. A via is formed at a selected section that extends through the first and second dielectric layers.
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