Importance

Loading Importance Indicators...

Abstract

A method of fabricating an extended drain MOS transistor which reduces a design rule and prevents the generation of leakage current. The method includes sequentially forming a diffusion film, a first conductive epitaxial layer, a gate oxide layer and a hard mask layer over a semiconductor substrate, forming a first hard mask pattern having a first thickness by performing a first etching process on the hard mask layer, forming a second hard mask pattern having a second thickness by performing a second etching process on the first hard mask layer, and then forming a thin gate oxide layer by performing a third etching process on the gate oxide layer using the second hard mask pattern as a mask.

Loading the Abstract Image...

First Claim