Crystal puller and method for growing a monocrystalline ingot
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United States of America Patent
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Apr 3, 2012
Grant Date -
Jun 17, 2004
app pub date -
Nov 10, 2003
filing date -
Nov 12, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A crystal puller for growing monocrystalline ingots includes a side heater adjacent a crucible for heating the crucible and a melt heat exchanger sized and shaped for surrounding the ingot and disposed adjacent a surface of the melt. The heat exchanger includes a heat source having an area for radiating heat to the melt for controlling heat transfer at the upper surface of the melt. The melt heat exchanger is adapted to reduce heat loss at the exposed upper surface portion. Methods for growing single crystal silicon crystals having desired defect characteristics are disclosed.
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