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United States of America Patent
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Apr 10, 2012
Grant Date -
Dec 7, 2006
app pub date -
Aug 17, 2006
filing date -
Feb 17, 1997
priority date (Note) -
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status (Latency Note)
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Abstract
An electroluminescent apparatus having a substrate and a transistor formed above the substrate and having a gate electrode and a semiconductor film. The electroluminescent apparatus having a first insulation film including a first contact hole and a junction electrode contacted to the semiconductor film through the first contact hole. The electroluminescent apparatus having a second insulation film formed above the junction electrode and the first insulation film and including a second contact hole and a pixel electrode formed on the second insulation film and contacted to the junction electrode through the second contact hole. The electroluminescent apparatus having an insulating layer formed above the second insulation film, an organic semiconductor film formed at an emitting region above the pixel electrode, and an opposite electrode formed above the organic semiconductor film and insulating layer. The insulating layer surrounding the emitting region and overlapping the second contact hole.
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