Method of depositing a uniform barrier layer and metal seed layer with reduced overhang over a plurality of recessed semiconductor features
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United States of America Patent
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Apr 17, 2012
Grant Date -
Oct 20, 2011
app pub date -
May 20, 2011
filing date -
Nov 26, 1997
priority date (Note) -
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Abstract
A method of depositing a metal seed layer with underlying barrier layer on a wafer substrate comprising a plurality of recessed device features. A first portion of the barrier layer is deposited on the wafer substrate without excessive build-up of barrier layer material on the openings to the plurality of recessed device features, while obtaining bottom coverage without substantial sputtering of the bottom surface. Subsequently, a metal seed layer is deposited using the same techniques used to deposit the barrier layer, to avoid excessive build up of metal seed layer material on the openings to the features, with minimal sputtering of the barrier layer surface.
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