Heating center PCRAM structure and methods for making
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United States of America Patent
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Apr 17, 2012
Grant Date -
Aug 6, 2009
app pub date -
Feb 5, 2008
filing date -
Feb 5, 2008
priority date (Note) -
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Abstract
Memory devices are described along with manufacturing methods. A memory device as described herein includes a bottom electrode and a first phase change layer comprising a first phase change material on the bottom electrode. A resistive heater comprising a heater material is on the first phase change material. A second phase change layer comprising a second phase change material is on the resistive heater, and a top electrode is on the second phase change layer. The heater material has a resistivity greater than the most highly resistive states of the first and second phase change materials.
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