Method for angular doping of source and drain regions for odd and even NAND blocks
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United States of America Patent
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Apr 24, 2012
Grant Date -
Jun 23, 2011
app pub date -
Feb 10, 2011
filing date -
Sep 28, 2004
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Abstract
A method for creating NAND flash memory. Source implantations are performed at a first implantation angle to areas between stacked gate structures of a NAND string. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The source implantation can include n-type and p-type materials implanted under different angles, and the drain implantation can include n-type and p-type materials implanted under different angles. Or, the source implantation can include multiple n-type implantations under different angles, and the drain implantation can include multiple n-type implantations under different angles.
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