Semiconductor device
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United States of America Patent
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Apr 24, 2012
Grant Date -
Dec 4, 2008
app pub date -
May 30, 2008
filing date -
May 31, 2007
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device according to the present invention has a multilayer wiring structure laminating and disposing a plurality of with sandwiching an insulating film and includes: a copper wire having copper as a main component; an insulating film formed on the copper wire; an aluminum wire having aluminum as a main component and formed on the insulating film to be electrically connected to the copper wire via a via hole formed to penetrate through the insulating film; and a surface protective film formed on the aluminum wire; and the surface protective film formed with a pad opening exposing a portion of the aluminum wire as an electrode pad for electrical connection with an external portion.
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