High speed sense amplifier array and method for non-volatile memory

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United States of America Patent

PATENT NO 8169831
APP PUB NO 20110205804A1
SERIAL NO

13100164

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Abstract

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Sensing circuits for sensing a conduction current of a memory cell among a group of non-volatile memory cells being sensed in parallel and providing the result thereof to a data bus are presented. A precharge circuit is coupled to a node for charging the node to an initial voltage. An intermediate circuit is also coupled to the node and connectable to the memory cell, whereby current from the precharge circuit can be supplied to the memory cell. The circuit also includes a comparator circuit to perform a determination the conduction current by a rate of discharge at the node; a data latch coupled to the comparator circuit to hold the result of said determination; and a transfer gate coupled to the data latch to supply a result latched therein to the data bus independently of the node. This arrangement improves sensing performance and can help to eliminate noise on the analog sensing path during sensing and reduce switching current.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES LLC6900 DALLAS PARKWAY SUITE 325 PLANO TX 75024

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Seungpil San Ramon, US 66 1291
Mui, Man Lung Santa Clara, US 52 785
Nguyen, Hao Thai San Jose, US 27 491
Wang, Chi-Ming Fremont, US 76 2163
Zhang, Fanglin Fremont, US 17 216

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