Importance

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Abstract

The present invention provides a method for producing polycrystalline silicon. The method for producing polycrystalline silicon comprises the steps of (A), (B), and (C),

(A) reducing a chlorosilane represented by the formula (1) with a metal at a temperature T1 to obtain a silicon compound;SiHnCl4-n  (1) wherein n is an integer of 0 to 3,(B) transferring the silicon compound to a zone having a temperature T2, wherein T1>T2; and(C) depositing polycrystalline silicon in the zone having a temperature T2, wherein the temperature T1 is not less than 1.29 times of a melting point (Kelvin unit) of the metal, and the temperature T2 is higher than a sublimation point or boiling point of the chloride of the metal.

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First Claim