Method of manufacturing metal wiring and method of manufacturing semiconductor device
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United States of America Patent
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May 8, 2012
Issued Date -
N/A
app pub date -
Jan 22, 2009
filing date -
Jul 27, 2001
priority date (Note) -
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Abstract
A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.
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