Integrated circuit 3D phase change memory array and manufacturing method
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United States of America Patent
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May 8, 2012
Grant Date -
Oct 28, 2010
app pub date -
Apr 27, 2009
filing date -
Apr 27, 2009
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Abstract
A 3D phase change memory device is based on an array of electrode pillars and a plurality of electrode planes that intersect the electrode pillars at interface regions that include memory elements that comprise a programmable phase change memory element and a threshold switching element. The electrode pillars can be selected using two-dimensional decoding, and the plurality of electrode planes can be selected using decoding on a third dimension.
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