US Patent No: 8,174,088

Number of patents in Portfolio can not be more than 2000

Solid state imaging device

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Abstract

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Storage capacitors Ctd and Cts are provided alternately side by side sequentially in a row direction. Each of the storage capacitors Ctd and Cts has an electrode layer 21 constituting a signal electrode and an upper side electrode layer 23 and a lower side electrode layer 28 constituting a fixed potential electrode. The signal electrodes of the respective storage capacitors Ctd and Cts are electrically independent of each other. The fixed potential electrodes of the respective storage capacitors Ctd and Cts are electrically connected to each other and connected to the ground etc. Contact holes 26a and 26b that connect the electrode layers 23 and 28 are provided between the electrode layers 21 of the neighboring storage capacitors Ctd and Cts so as to occupy 52% or more of the opposed area of the second electrode sections of two neighboring storage capacitors.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NIKON CORPORATIONTOKYO4849

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Komai, Atsushi Tokorozawa, JP 4 43

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SHARP KABUSHIKI KAISHA (1)
* 6,784,949 Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same 57 2000
 
FUJI XEROX CO., LTD. (1)
5,382,975 Image reading apparatus 12 1992
 
QIMONDA AG (1)
* 2005/0224,888 Integrated circuit array 30 2005
 
BOE TECHNOLOGY GROUP CO., LTD. (1)
* 6,770,936 Thin film transistors, and liquid crystal display device and electronic apparatus using the same 19 1998
 
UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION (5)
5,990,506 Active pixel sensors with substantially planarized color filtering elements 73 1997
6,476,860 Center of mass detection via an active pixel sensor 9 1998
6,980,230 Center of mass detection via an active pixel sensor 7 2002
7,053,929 Center of mass detection via an active pixel sensor 8 2002
7,105,371 Method of acquiring an image from an optical structure having pixels with dedicated readout circuits 30 2003
 
HAPPY BOOKS SRL (1)
* 5,814,872 Integrated circuit and thin film integrated circuit 3 1997
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
* 5,286,983 Thin-film-transistor array with capacitance conductors 10 1992
 
CALIFORNIA INSTITUTE OF TECHNOLOGY (50)
5,471,515 Active pixel sensor with intra-pixel charge transfer 695 1994
6,101,232 Active pixel sensor with intra-pixel charge transfer 14 1995
6,021,172 Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter 91 1995
5,952,645 Light-sensing array with wedge-like reflective optical concentrators 31 1996
5,793,322 Successive approximation analog-to-digital converter using balanced charge integrating amplifiers 34 1996
5,880,691 Capacitively coupled successive approximation ultra low power analog-to-digital converter 124 1996
6,115,065 Image sensor producing at least two integration times from each sensing pixel 127 1996
6,175,383 Method and apparatus of high dynamic range image sensor with individual pixel reset 79 1996
5,949,483 Active pixel sensor array with multiresolution readout 193 1997
6,166,768 Active pixel sensor array with simple floating gate pixels 72 1997
5,841,126 CMOS active pixel sensor type imaging system on a chip 458 1997
5,909,026 Integrated sensor with frame memory and programmable resolution for light adaptive imaging 100 1997
5,887,049 Self-triggered X-ray sensor 50 1997
5,929,800 Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier 23 1997
5,886,659 On-focal-plane analog-to-digital conversion for current-mode imaging devices 204 1997
6,400,824 Semiconductor imaging sensor with on-chip encryption 32 1997
6,107,618 Integrated infrared and visible image sensors 25 1998
6,107,619 Delta-doped hybrid advanced detector for low energy particle detection 11 1998
6,515,702 Active pixel image sensor with a winner-take-all mode of operation 23 1998
6,546,148 Circuitry for determining median of image portions 7 1998
6,549,235 Single substrate camera device with CMOS image sensor 34 1998
6,403,963 Delta-doped CCD's as low-energy particle detectors and imagers 13 1998
6,606,122 Single chip camera active pixel sensor 39 1998
6,801,258 CMOS integration sensor with fully differential column readout circuit for light adaptive imaging 26 1999
6,665,013 Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter 50 1999
6,057,539 Integrated sensor with frame memory and programmable resolution for light adaptive imaging 53 1999
6,124,819 Charge integration successive approximation analog-to-digital converter for focal plane applications using a single amplifier 32 1999
6,373,050 Focal plane infrared readout circuit with automatic background suppression 16 1999
6,380,572 Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate 44 1999
6,384,413 Focal plane infrared readout circuit 19 1999
6,326,230 High speed CMOS imager with motion artifact supression and anti-blooming 47 2000
6,787,749 Integrated sensor with frame memory and programmable resolution for light adaptive imaging 18 2000
6,346,700 Delta-doped hybrid advanced detector for low energy particle detection 14 2000
6,555,842 Active pixel sensor with intra-pixel charge transfer 31 2000
7,190,398 Image sensor with high dynamic range linear output 17 2000
6,519,371 High-speed on-chip windowed centroiding using photodiode-based CMOS imager 27 2000
7,268,814 Time-delayed-integration imaging with active pixel sensors 22 2000
6,839,452 Dynamically re-configurable CMOS imagers for an active vision system 45 2000
* 6,943,838 Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate 14 2000
6,456,326 Single chip camera device having double sampling operation 46 2001
6,570,617 CMOS active pixel sensor type imaging system on a chip 47 2001
6,933,488 Variable electronic shutter in CMOS imager with improved anti smearing techniques 11 2001
7,002,626 Image sensor with motion artifact supression and anti-blooming 19 2001
6,944,352 Circuitry for determining median of image portions 9 2001
7,019,345 Photodiode CMOS imager with column-feedback soft-reset for imaging under ultra-low illumination and with high dynamic range 12 2001
6,838,301 Silicon-on-insulator (SOI) active pixel sensors with the photosite implemented in the substrate 15 2002
6,825,059 Active pixel sensor array with electronic shuttering 19 2002
6,721,464 High-speed on-chip windowed centroiding using photodiode-based CMOS imager 17 2003
6,744,068 Active pixel sensor with intra-pixel charge transfer 33 2003
7,369,166 Single substrate camera device with CMOS image sensor 11 2003
 
CALIFORNIA INSTITUTE OF CALIFORNIA (1)
6,486,503 Active pixel sensor array with electronic shuttering 37 1997
 
PHILIPS ELECTRONICS NORTH AMERICA CORPORATION (1)
* 6,191,830 Electro-optical display having split storage capacitor structure for series capacitance 4 1998
* Cited By Examiner

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