High speed operation method for twin MONOS metal bit array
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United States of America Patent
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May 8, 2012
Grant Date -
Aug 25, 2011
app pub date -
May 2, 2011
filing date -
Aug 30, 2005
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Abstract
The present invention provides a novel read method of twin MONOS metal bit or diffusion bit structure for high-speed application. In a first embodiment of the present invention, the alternative control gates are set at the same voltage. In a second embodiment of the present invention, all the control gates are set at the operational voltage from the beginning. In both embodiments, the bit line and word gate are used to address the selected memory cell.teh
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