Programmable resistive RAM and manufacturing method
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United States of America Patent
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May 15, 2012
Grant Date -
Sep 2, 2010
app pub date -
May 11, 2010
filing date -
Jan 9, 2006
priority date (Note) -
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Abstract
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.
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