Semiconductor device and method for manufacturing the same
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United States of America Patent
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May 15, 2012
Grant Date -
Jan 26, 2006
app pub date -
Jul 21, 2005
filing date -
Jul 26, 2004
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for manufacturing a semiconductor device includes forming a gate insulating layer, a gate and a protective layer on a semiconductor substrate, forming a spacer on lateral sides of the protective layer and the gate, forming one or more junction regions in the semiconductor substrate at sides of the gate, partially filling a gap between adjacent gates by selectively forming a conductive layer on an exposed portion of the semiconductor substrate between the adjacent gates, forming an insulating layer over the semiconductor substrate so as to fill a full height of the gap between the adjacent gates, and forming a contact hole partially exposing the conductive layer by etching the insulating layer.
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