Semiconductor device having floating body element and bulk body element
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United States of America Patent
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May 15, 2012
Grant Date -
Jan 1, 2009
app pub date -
Jun 25, 2008
filing date -
Jun 28, 2007
priority date (Note) -
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Abstract
A semiconductor device having a floating body element and a bulk body element and a manufacturing method thereof are provided. The semiconductor device includes a substrate having a bulk body element region and floating body element regions. An isolation region defining an active region of the bulk body element region of the substrate and defining first buried patterns and first active patterns, which are sequentially stacked on a first element region of the floating body element regions of the substrate is provided. A first buried dielectric layer interposed between the first buried patterns and the substrate and between the first buried patterns and the first active patterns is provided.
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