Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage
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United States of America Patent
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May 15, 2012
Grant Date -
Feb 11, 2010
app pub date -
Jan 31, 2008
filing date -
Jan 31, 2007
priority date (Note) -
Expired
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Abstract
Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
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