Nonvolatile memory device with incremental step pulse programming
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United States of America Patent
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May 29, 2012
Grant Date -
May 20, 2010
app pub date -
Nov 16, 2009
filing date -
Nov 19, 2008
priority date (Note) -
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Abstract
A nonvolatile memory device includes a sense amplifier circuit sensing first data from a memory cell via a bit line and outputting the sensed first data, in response to a read command. A write driver circuit programs the memory cell and stores second data indicating a programming state of the memory cell, in response to a program command. A verification block outputs a result of a comparison between the first and second data in response to a first read command. The second data is updated based on the determination on the programming of the memory cell in response to a second read command applied following the first read command.
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