Retention in NVM with top or bottom injection
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United States of America Patent
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May 29, 2012
Grant Date -
Jul 9, 2009
app pub date -
Jan 8, 2009
filing date -
Jan 8, 2008
priority date (Note) -
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Abstract
Retention of charges in a nonvolatile memory (NVM) cell having a nitride-based injector (such as SiN, SIRN, SiON) for facilitating injection of holes into a charge-storage layer (for NROM, nitride) of a charge-storage stack (for NROM, ONO) may be improved by providing an insulating layer (for NROM, oxide) between the charge-storage layer and the injector has a thickness of at least 3 nm. Top and bottom injectors are disclosed. Methods of operating NVM cells are disclosed. The NVM cell may be NROM, SONOS, or other oxide-nitride technology NVM cells such as SANOS, MANOS, TANOS.
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