Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8191217
APP PUB NO 20110032659A1
SERIAL NO

12535769

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ATTORNEY / AGENT: (SPONSORED)

Importance

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Abstract

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A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
GLOBALFOUNDRIES INC.SUNNYVALE, CA16105

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunn, James S Jericho, US 61 441
He, Zhong-Xiang Essex Junction, US 161 769
Stamper, Anthony K Williston, US 446 3180

Cited Art Landscape

Patent Info (Count) # Cites Year
 
CREE, INC. (1)
6998322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures 10 2003
 
III HOLDINGS 12, LLC (1)
* 2009/0200,638 MIM CAPACITOR INTEGRATION 17 2006
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 6271084 Method of fabricating a metal-insulator-metal (MIM), capacitor structure using a damascene process 66 2001
2005/0132,549 Method for making metal capacitors with low leakage currents for mixed-signal devices 31 2004
 
APPLIED MATERIALS, INC. (1)
6677254 Processes for making a barrier between a dielectric and a conductor and products produced therefrom 21 2001
 
SAMSUNG ELECTRONICS CO., LTD. (5)
6885056 High-k dielectric stack in a MIM capacitor and method for its fabrication 12 2003
7008841 Semiconductor device having metal-insulator-metal capacitor and method for fabricating the same 11 2004
2006/0158,829 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 7 2006
* 2006/0183,280 Metal-insulator-metal capacitors and methods of forming the same 12 2006
2007/0202,656 Method of fabricating a semiconductor device 10 2007
 
KABUSHIKI KAISHA TOSHIBA (1)
7312118 Semiconductor device and method of manufacturing the same 71 2006
 
The United States of America as represented by the Secretary of the Army (1)
6919283 Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications 4 2003
 
Microelectronics/Institut fur Innovative Mikroelektronik (1)
2006/0286,734 MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material 6 2006
 
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (1)
6730573 MIM and metal resistor formation at CU beol using only one extra mask 38 2002
 
HITACHI, LTD. (1)
2008/0020,540 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 9 2007
* Cited By Examiner

Patent Citation Ranking

Forward Cite Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
9548349 Semiconductor device with metal extrusion formation 0 2014
 
STMICROELECTRONICS (CROLLES 2) SAS (2)
* 8424177 MIM capacitor with enhanced capacitance 1 2010
* 2011/0080,686 MIM CAPACITOR 2 2010
 
X-FAB Semiconductor Foundries AG (1)
9524963 Semiconductor device 0 2013
* Cited By Examiner

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