US Patent No: 8,191,217

Number of patents in Portfolio can not be more than 2000

Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

ALSO PUBLISHED AS: 20110032659

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Importance

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Abstract

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A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
INTERNATIONAL BUSINESS MACHINES CORPORATIONARMONK, NY45685

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunn, James S Jericho, VT 77 270
He, Zhong-Xiang Essex Junction, VT 231 397
Stamper, Anthony K Williston, VT 576 1885

Cited Art Landscape

Patent Info (Count) # Cites Year
 
SAMSUNG ELECTRONICS CO., LTD. (5)
6,885,056 High-k dielectric stack in a MIM capacitor and method for its fabrication 9 2003
7,008,841 Semiconductor device having metal-insulator-metal capacitor and method for fabricating the same 9 2004
2006/0158,829 Multi-layered dielectric film of microelectronic device and method of manufacturing the same 3 2006
* 2006/0183,280 Metal-insulator-metal capacitors and methods of forming the same 8 2006
2007/0202,656 Method of fabricating a semiconductor device 6 2007
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (2)
* 6,271,084 Method of fabricating a metal-insulator-metal (MIM), capacitor structure using a damascene process 58 2001
2005/0132,549 Method for making metal capacitors with low leakage currents for mixed-signal devices 24 2004
 
APPLIED MATERIALS, INC. (1)
6,677,254 Processes for making a barrier between a dielectric and a conductor and products produced therefrom 16 2001
 
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (1)
6,730,573 MIM and metal resistor formation at CU beol using only one extra mask 29 2002
 
CREE, INC. (1)
6,998,322 Methods of fabricating high voltage, high temperature capacitor and interconnection structures 8 2003
 
FREESCALE SEMICONDUCTOR, INC. (1)
* 2009/0200,638 MIM CAPACITOR INTEGRATION 6 2006
 
HITACHI, LTD. (1)
2008/0020,540 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 6 2007
 
KABUSHIKI KAISHA TOSHIBA (1)
7,312,118 Semiconductor device and method of manufacturing the same 40 2006
 
Microelectronics/Institut fur Innovative Mikroelektronik (1)
2006/0286,734 MIM/MIS structure with praseodymium titanate or praseodymium oxide as insulator material 3 2006
 
The United States of America as represented by the Secretary of the Army (1)
6,919,283 Fabrication of pure and modified Ta2O5 thin film with enhanced properties for microwave communication, dynamic random access memory and integrated electronic applications 3 2003
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
STMICROELECTRONICS (CROLLES 2) SAS (1)
* 8,424,177 MIM capacitor with enhanced capacitance 0 2010
* Cited By Examiner

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