US Patent No: 8,193,522
Number of patents in Portfolio can not be more than 2000
Diamond type quad-resistor cells of PRAM
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Jun 5, 2012
Issued date -
Apr 9, 2009
filing date -
12/421,044
serial no -
In Force
status
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Abstract
A method of forming a phase-change random access memory (PRAM) cell, and a structure of a phase-change random access memory (PRAM) cell are disclosed. The PRAM cell includes a bottom electrode, a heater resistor coupled to the bottom electrode, a phase change material (PCM) formed over and coupled to the heater resistor, and a top electrode coupled to the phase change material. The phase change material contacts a portion of a vertical surface of the heater resistor and a portion of a horizontal surface of the heater resistor to form an active region between the heater resistor and the phase change material.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
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| 2007/0165,452 PHASE CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING PHASE CHANGE MEMORY DEVICE | 2 | 2007 | |
| 2008/0042,118 PHASE-CHANGE MEMORY DEVICE WITH MINIMIZED REDUCTION IN THERMAL EFFICIENCY AND METHOD OF MANUFACTURING THE SAME | 11 | 2007 | |
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| 2009/0184,306 PHASE CHANGE MEMORY CELL WITH FINFET AND METHOD THEREFOR | 3 | 2008 | |
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| 2010/0012,916 PHASE CHANGE MEMORY | 2 | 2008 | |
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| 2009/0008,621 PHASE-CHANGE MEMORY ELEMENT | 5 | 2007 | |
Patent Citation Ranking
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