Deep trench capacitor in a SOI substrate having a laterally protruding buried strap
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United States of America Patent
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Jun 12, 2012
Grant Date -
Apr 21, 2011
app pub date -
Dec 21, 2010
filing date -
Jan 18, 2008
priority date (Note) -
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Abstract
A deep trench is formed to a depth midway into a buried insulator layer of a semiconductor-on-insulator (SOI) substrate. A top semiconductor layer is laterally recessed by an isotropic etch that is selective to the buried insulator layer. The deep trench is then etched below a bottom surface of the buried insulator layer. Ion implantation is performed at an angle into the deep trench to dope the sidewalls of the deep trench beneath the buried insulator layer, while the laterally recessed sidewalls of the top semiconductor layer are not implanted with dopant ions. A node dielectric and trench fill materials are deposited into the deep trench. A buried strap has an upper buried strap sidewall that is offset from a lower buried strap sidewall and a deep trench sidewall.
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