Plasma processing method and plasma processing apparatus

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United States of America Patent

PATENT NO 8198195
APP PUB NO 20090134120A1
SERIAL NO

11992540

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Abstract

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A plasma processing apparatus in which consumption of expensive krypton and xenon gases is suppressed as much as possible while reducing damage on a workpiece during plasma processing. In plasma processing of a substrate using a rare gas, two or more kinds of different rare gases are employed, and an inexpensive argon gas is used as one rare gas and any one or both of krypton and xenon gases having a larger collision cross-sectional area against electron than that of the argon gas is used as the other gas. Consequently, consumption of expensive krypton and xenon gases is suppressed as much as possible and damage on a workpiece is reduced during plasma processing.

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Patent Owner(s)

  • OHMI, TADAHIRO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ohmi, Tadahiro Miyagi, JP 798 13051
Teramoto, Akinobu Miyagi, JP 114 768

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