Stacked switchable element and diode combination with a low breakdown switchable element
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United States of America Patent
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Jun 19, 2012
Grant Date -
May 22, 2008
app pub date -
May 8, 2003
filing date -
Oct 16, 2001
priority date (Note) -
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Abstract
A device (10) comprises a semiconductor diode (12) and a switchable element (14) positioned in stacked adjacent relationship. The semiconductor diode (12) and the switchable element (14) are electrically connected in series with one another. The switchable element (14) is switchable from a low-conductance state to a high-conductance state in response to the application of a low-density forming current and/or a low voltage.
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