Non-volatile semiconductor storage device
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United States of America Patent
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Jun 19, 2012
Grant Date -
Mar 31, 2011
app pub date -
Sep 3, 2010
filing date -
Sep 25, 2009
priority date (Note) -
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Abstract
A non-volatile semiconductor storage device according to one aspect of the present invention includes a plurality of sense amplifier circuit that are configured to carry out a plurality of read cycles on a plurality of bit lines connected to those memory cells that are selected by a selected one of the word lines. During the second and subsequent read cycles, supply of a read current is ceased to those bit lines when it is determined in the preceding read cycle that a current not less than a certain determination current level flows therethrough, and the read current is supplied only to the remaining bit lines. A setup time of the bit lines in the first read cycle is set shorter than a setup time of the bit lines in the second and subsequent read cycles.
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