Method for manufacturing a resistive switching memory device and devices obtained thereof
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United States of America Patent
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Jun 26, 2012
Grant Date -
Jun 24, 2010
app pub date -
Dec 4, 2009
filing date -
Dec 24, 2008
priority date (Note) -
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Abstract
A method for manufacturing a resistive switching memory device comprises providing a substrate comprising an electrical contact, providing on the substrate a dielectric layer comprising a trench exposing the electrical contact, and providing in the trench at least the bottom electrode and the resistive switching element of the resistive memory device. The method may furthermore comprise providing a top electrode at least on or in the trench, in contact with the resistive switching element. The present invention also provides corresponding resistive switching memory devices.
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