Immersion lithography system using a sealed wafer bath

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8208116
APP PUB NO 20080106710A1
SERIAL NO

11670860

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Immersion lithography system and method using a sealed wafer bottom are described. One embodiment is an immersion lithography apparatus including a lens assembly comprising an imaging lens and a wafer stage for retaining a wafer beneath the lens assembly and comprising a seal ring for sealing a gap between a bottom edge of a wafer retained on the wafer stage and the wafer stage. The apparatus further includes a fluid tank for retaining immersion fluid, the fluid tank situated with respect to the wafer stage for enabling full immersion of the wafer retained on the wafer stage in the immersion fluid; a cover disposed over at least a portion of the fluid tank for providing a temperature-controlled, fluid-rich environment within the fluid tank; and at least one directional flow control fluid inlet surrounding the imaging lens for directing immersion fluid toward an edge of the wafer retained on the wafer stage closest to the imaging lens.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.HSIN-CHU16281

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Ching-Yu Yilang County, TW 252 1944
Lin, Burn Jeng Hsin-Chu, TW 104 1996

Cited Art Landscape

Patent Info (Count) # Cites Year
 
NIKON CORPORATION (6)
2005/0219,488 Exposure apparatus and method for producing device 96 2005
2005/0259,234 Exposure apparatus and device manufacturing method 336 2005
2007/0177,125 Substrate holding unit, exposure apparatus having same, exposure method, method for producing device, and liquid repellent plate 51 2005
7483119 Exposure method, substrate stage, exposure apparatus, and device manufacturing method 38 2005
2006/0146,306 Exposure apparatus, exposure method, and method for producing device 54 2006
* 2006/0232,757 Projection exposure apparatus, cleaning and maintenance methods of a projection exposure apparatus, and device manufacturing method 62 2006
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (5)
6788477 Apparatus for method for immersion lithography 318 2002
2005/0286,033 Immersion lithography system with wafer sealing mechanisms 16 2004
2007/0091,287 IMMERSION LITHOGRAPHY APPARATUS AND METHODS 40 2006
2008/0106,710 Immersion Lithography System Using A Sealed Wafer Bath 4 2007
2008/0106,715 Immersion Lithography System Using A Sealed Wafer Bath 13 2007
 
ASML NETHERLANDS B.V. (1)
7075616 Lithographic apparatus and device manufacturing method 213 2003
 
CANON KABUSHIKI KAISHA (1)
5610683 Immersion type projection exposure apparatus 938 1995
* Cited By Examiner

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (3)
9046789 Immersion lithography system using a sealed wafer bath 0 2012
9696634 Immersion lithography system using a sealed wafer bath 0 2015
9793183 System and method for measuring and improving overlay using electronic microscopic imaging and digital processing 0 2016
* Cited By Examiner

Maintenance Fees

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7.5 Year Payment $3600.00 $1800.00 $900.00 Dec 26, 2019
11.5 Year Payment $7400.00 $3700.00 $1850.00 Dec 26, 2023
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Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00