Vertically stacked field programmable nonvolatile memory and method of fabrication
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United States of America Patent
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Jun 26, 2012
Grant Date -
Jan 27, 2011
app pub date -
Oct 7, 2010
filing date -
Nov 16, 1998
priority date (Note) -
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Abstract
A memory cell is provided that includes a first conductor, a second conductor, a steering element that is capable of providing substantially unidirectional current flow, and a state change element coupled in series with the steering element. The state change element is capable of retaining a programmed state, and the steering element and state change element are vertically aligned with one another. Other aspects are also provided.
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